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Extremely Flat Interfaces in In x Ga 1-x As/Al 0.3 Ga 0.7 As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy

Tatsuya Saeki, Tatsuya Saeki ; Takeharu Motokawa, Takeharu Motokawa ; Takahiro Kitada, Takahiro Kitada ; [et al.]

IOP Publishing ; 1997

In: Japanese Journal of Applied Physics Vol. 36, No. 3S ( 1997-03-01), p. 1786-

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In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 3S ( 1997-03-01), p. 1786-

Abstract: Effectively atomically flat interfaces over a macroscopic area (super-flat interfaces) have been achieved in pseudomorphic In x Ga 1- x As/Al 0.3 Ga 0.7 As ( x = 0.0, 0.04, 0.07) quantum wells (QWs) with well widths ( L w ) of 1.2–11.8 nm grown on (411)A GaAs substrates at 520°C by molecular beam epitaxy (MBE). A single, sharp photoluminescence (PL) peak was observed for each QW over the large area of the wafer (8 mm ×5 mm). The linewidths for narrow QWs ( L w = 2.4 nm) were 8.9 meV ( x = 0.04) and 9.9 meV ( x = 0.07) at 4.2 K, which were about 30% smaller than those of QWs simultaneously grown on conventional (100) GaAs substrates.

Type of Medium: Online Resource

ISSN: 0021-4922 , 1347-4065

URL: Article

DOI: 10.1143/JJAP.36.1786

RVK:

UA 4210.1

RVK:

UA 4210.2

RVK:

UA 4210

Language: Unknown

Publisher: IOP Publishing