In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 3S ( 1997-03-01), p. 1884-
Abstract:
We report on an observation of Stark ladder photoluminescence (PL) of X states in GaAs/AlAs type-I superlattices. The PL line exhibits a linear blue shift corresponding to one half the period of the superlattice with increasing bias voltage. The PL intensity then becomes maximum when X1-Γ2 mixing occurs. Carrier sweep-out from the X states is drastically improved by the X1-Γ2 mixing. These results demonstrate that optical properties even in type-I superlattices are seriously affected by the mixing of X states with a higher Γ subband under an electric field.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.1884
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7