In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 4R ( 1997-04-01), p. 2281-
Abstract:
Tin oxide ( SnO x ) thin films were deposited by ion-assisted deposition (IAD) at various ion beam voltages ( V I ) onto amorphous SiO 2 /Si substrate at room temperature. Tin oxide thin films with nonstoichiometric/stoichiometric composition were fabricated. The as-deposited SnO x films were mostly amorphous, but they exhibited various degrees of crystallinity and fine grain size after annealing at 500° C for 1 h in air. The annealed film deposited using an ion beam energy ( E I ) of 300 eV showed a preferred orientation along the SnO 2 (110) plane. The preferred orientation changed to SnO 2 (002) for film 1000 (the annealed film deposited with E I =1000 eV) through an amorphous intermediate structure of film 500 (the annealed film deposited with E I =500 eV). X-ray photoelectron spectroscopy study showed that the main Sn3 d peaks in all samples were similar to the binding energy of Sn 4+ and the atomic ratios for all the films were higher than 1.51. For the film grown under an average energy of 123 eV/atom, the refractive index was 2.0 and the estimated porosity was 5.2% smaller than that of the other films.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.2281
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
