In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 1R ( 1997-01-01), p. 262-
Abstract:
Poly-Ge films with good crystallinity were prepared by a low-temperature solid phase crystallization (SPC) method for application to multilayer a-Si/poly-Ge structures. Using a-Ge:H films prepared at just below the thermal decomposition temperature of GeH 4 gas as the starting material for SPC, high-quality poly-Ge with Ge 〈 111 〉 peak orientation was obtained after low-temperature annealing at 350°C for 2 h in a nitrogen atmosphere. Furthermore, the selective crystallization of a-Ge:H sublayers in an a-Si:H( ∼50 Å)/a-Ge:H( ∼1000 Å) multilayer film was achieved by annealing at 350°C. The poly-Ge sublayers included large crystal grains with dimensions of about 3000 Å, which were three times as thick as the poly-Ge sublayers.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7