In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 5R ( 1997-05-01), p. 2666-
Abstract:
Uniform fabrication of highly reliable 50–60 mW-class 685 nm laser diodes (LDs) with a window-mirror structure has been realized by using selective solid-phase Zn diffusion and three-inch full wafer processing. A window-mirror structure at the LD mirror is formed by Zn-induced disordering of an ordered GaInP multiple quantum-well (MQW) active layer. High uniformity of characteristics such as the operating current and the far-field pattern has been obtained by realization of highly uniform Zn diffusion. A small astigmatic distance (Δ Z ≦3 µ m), a low relative intensity noise ( R I N ≦-135 dB/Hz) and a high speed response ( T r , T f ≦1.2 ns) are obtained in addition to the high-power and high-temperature characteristics (70 mW, 80° C) in spite of the existence of the window structure. The LDs have exhibited reliable 6,000–10,000 h operation under the conditions of 60° C and 50–60 mW for the first time.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.2666
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
