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Cesium-induced Reconstruction on Si(113)3 × 2 Surface Studied by Low Energy Electron Diffraction and X-ray Photoelectron Spectroscopy

Ki-Seok An, Ki-Seok An ; Chan-Cuk Hwang, Chan-Cuk Hwang ; Rae-Jun Park, Rae-Jun Park ; [et al.]

IOP Publishing ; 1997

In: Japanese Journal of Applied Physics Vol. 36, No. 5R ( 1997-05-01), p. 2833-

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In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 5R ( 1997-05-01), p. 2833-

Abstract: We have investigated Cs-induced reconstruction on the Si(113)3×2 surface using low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). For Cs deposition at room temperature, the (3×1) LEED pattern was observed for a wide Cs coverage range. At high substrate temperatures, the (3×1), (1×5+2×) and (2×2) phases were observed with increasing Cs deposition time. The relative Cs saturation coverages of (3×1)-Cs at RT and (2×2)-Cs at 300°C were measured from Cs 3d/Si 2p core level XPS intensity ratios. The results are summarized in a phase diagram as a function of the Cs deposition time.

Type of Medium: Online Resource

ISSN: 0021-4922 , 1347-4065

URL: Article

DOI: 10.1143/JJAP.36.2833

RVK:

UA 4210.1

RVK:

UA 4210.2

RVK:

UA 4210

Language: Unknown

Publisher: IOP Publishing