In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 1R ( 1997-01-01), p. 289-
Abstract:
Hydrogenated amorphous silicon-carbon (a-Si 1- x C x :H) was deposited by a new deposition method of hybrid-plasma chemical vapor deposition. In this method, pre-cracked CH 4 by a microwave plasma is introduced into a chamber where SiH 4 is decomposed by a radio-frequency plasma. A-Si 1- x C x :H films deposited by this method show high photoconductivity in the optical-bandgap range from 2.0 to 2.3 eV. The bonding structures in the films deposited by hybrid-plasma CVD were analyzed using Fourier transform infrared absorption and X-ray photoelectron spectroscopy. The films deposited with the microwave plasma contain 1.6–3 times larger tetrahedral Si–C bonds than graphitic C–C bonds, for the same carbon content. Decomposition of CH 4 by the microwave plasma leads to a change of the main precursors for the vapor and/or surface reaction, and it is a promising process for obtaining a-Si 1- x C x :H with high-performance photoelectric properties resulting from the dominant tetrahedral bonds.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7