In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 1R ( 1997-01-01), p. 294-
Kurzfassung:
Pt films, as bottom electrodes for PZT capacitors, were deposited on Ti/SiO 2 /Si substrates using DC magnetron sputtering under various deposition conditions. The effects of post-annealing on surface morphology, element diffusion, microstructure and structural phase of the Pt films were investigated. The structure and electrical properties of PZT films deposited on Pt/Ti/SiO 2 /Si electrodes were also studied. As the deposition temperature of the Pt film increases and the deposition rate decreases, the film becomes dense so that Ti out-diffusion and film deformation are suppressed. The out-diffused Ti faciliates the formation of nucleation sites for perovskite PZT films. However, excess Ti out-diffusion not only decreases the total capacitance of the PZT films due to formation of an interfacial layer having a low dielectric constant but also degrades the leakage current characteristics of the PZT films due to deformation of the Pt electrode.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1997
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
