In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 6S ( 1997-06-01), p. 4139-
Abstract:
We have investigated the transport properties of an extremely narrow channel metal-oxide-semiconductor field-effect-transistor (MOSFET) fabricated by a novel anisotropic etching technique. The device shows clear Coulomb blockade oscillations at room temperature, while aperiodic sharp peaks are observed at low temperatures. Measurements of temperature dependence and magnetic field dependence reveal that the narrow channel of the MOSFET is separated into quantum dots and that not only the resonant tunneling transport but also the thermally activated hopping conduction plays an important role at low temperatures.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.4139
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7