In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 7S ( 1997-07-01), p. 4879-
Abstract:
Ring-shaped permanent magnets are placed on the back of both the cathode and the anode electrodes in a parallel-plate RF plasma device and magnetron plasmas with axial symmetry are produced. Positive photoresist films are etched using the magnetron plasma device. The S pole of the magnets faces the plasmas. Since the same poles face each other, the axial magnetic field is canceled and the cusp field is formed around the axis. An Al plate is placed on the cathode and its thickness is varied. Then, the sheath in front of the cathode is formed around the region where the axial magnetic field is canceled by the two magnets. The etch rate of 1.1 µm/min can be obtained. However, the region in which the etch rate is uniform is not large. The measured etching characteristics are discussed based on the spatial distributions of the magnetic field and the ion saturation current. Line-and-space of 0.25 µm patterns are etched although somewhat undercut profiles are observed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.4879
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
