In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 7S ( 1997-07-01), p. 4971-
Kurzfassung:
Particles generated during highly selective SiO 2 etching using a magnetically enhanced reactive ion etcher and an inductively coupled plasma etcher are investigated. The pressure ranges from 3 to 60 mTorr in mixtures of CHF 3 , CF 4 , C 2 F 6 , C 4 F 8 , O 2 and Ar. Polymers at the reactor surface are the major contributors to particle formation, and particles fall onto the wafer during the etching process. The formation mechanism is heterogeneous. By quadrupole mass spectrometry and optical emission spectroscopy, C 2 and C x F y species can be used to monitor the level of particle contamination in highly selective SiO 2 etching. During the Ar/O 2 dry cleaning process to decontaminate the plasma chamber, concentrations of C 2 and C x F y radicals and CO products decrease with the removal of the polymers from the chamber wall, while the concentrations of O and O 2 radicals increase.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.4971
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1997
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7