In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 12R ( 1997-12-01), p. 7264-
Kurzfassung:
InGaAs epilayers were grown on semi-insulating (SI) InP substrates by liquid phase epitaxy (LPE) with a rare-earth (RE) compound Pr 2 O 3 added into the growth melt during the epitaxial process for the first time. Without the growth melt baking process, the corresponding Hall measurements indicate that the background concentration of these InGaAs-grown layers will decrease from a value of 1.6×10 16 cm -3 to 2.0×10 15 cm -3 . Their corresponding 77 K mobility also increases significantly from a value of 15321 cm 2 / V·s to 32171 cm 2 / V·s. The X-ray diffraction measurements, secondary ion mass measurements (SIMS) and photoluminescence (PL) spectra of Pr 2 O 3 - added InGaAs epitaxial layers all demonstrate that the grown layers exhibit pure crystalline quality. Finally, InGaAs/InGaAs/InP pin diodes were fabricated, and a smaller leakage current and better response for the Pr 2 O 3 - added samples were reported.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.7264
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1997
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
