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Advanced Trench and Local Oxidation of Silicon (LOCOS) Isolation Technology for Ultra-Low-Power Bulk Dynamic Threshold Metal Oxide Semiconductor Field Effect Transistor (B-DTMOS)

Hiroshi Kotaki, Hiroshi Kotaki ; Kouichirou Adachi, Kouichirou Adachi ; Kazuo Sugimoto, Kazuo Sugimoto ; [et al.]

IOP Publishing ; 1997

In: Japanese Journal of Applied Physics Vol. 36, No. 12S ( 1997-12-01), p. 7660-

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In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 12S ( 1997-12-01), p. 7660-

Abstract: We have developed a novel deep trench and local oxidation of silicon (LOCOS) isolation technology termed SITOS II in order to isolate the shallow-well regions necessary for realizing a high speed dynamic threshold metal oxide semiconductor field effect transistor (MOSFET) in a bulk wafer. Using this simple isolation technology, suppression of birds-beak formation, low junction leakage current, high punch-through voltage between shallow-wells, and sub-threshold transistor characteristics without kinks were achieved.

Type of Medium: Online Resource

ISSN: 0021-4922 , 1347-4065

URL: Article

DOI: 10.1143/JJAP.36.7660

RVK:

UA 4210.1

RVK:

UA 4210.2

RVK:

UA 4210

Language: Unknown

Publisher: IOP Publishing