In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 12S ( 1997-12-01), p. 7782-
Abstract:
A selective-area oxidation technique using electron beam (e-beam) irradiation with a mixture of O 2 and H 2 O gases is studied for the fabrication of small tunnel junctions using Si and Cr. Auger electron spectroscopy clearly shows the existence of Si–O bonding at e-beam-irradiated Si surfaces. The height of SiO x is measured by atomic-force-microscope observation, and it is confirmed that the thickness of SiO x can be controlled at a nanometer scale. The line-dose dependence of the resistance of the Cr/CrO x /Cr structure was measured at room temperature and 77 K, and a step-function-like dependence was observed, which indicates that the oxidation takes place over the entire thickness of the 3-nm-thick Cr film. Nonlinear current-voltage characteristics were observed, which suggest that a thin tunneling barrier of CrO x can be realized. The selective-area oxidation technique can be applied to the fabrication of small tunneling junctions.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.7782
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7