In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 12S ( 1997-12-01), p. 7805-
Abstract:
The interaction of atomic hydrogen with the Si(111)√3 ×√3R30°-Sn surface is studied by scanning tunneling microscopy (STM). At room temperature, it is difficult for hydrogen to bond to silicon atoms on the surface which are bonded covalently to Sn atoms, as compared with those bound to Ag, Al and In, which have been reported so far. After annealing at elevated temperatures, hydrogen can bond with silicon surfaces, and clustering of Sn atoms is observed. At higher annealing temperatures around 580°C, hydrogen desorbs accompanied by surface silicon atoms, which causes a transformation of the surface structure from √3 ×√3R30° to 2√3 ×2√3R30° as a result of etching. It is suggested that the difference in formation energy on the disordered Si substrate is related to the restructuring.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.7805
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7