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Control of Organic Interfaces with a Thin Film of Silicon Monoxide between 8-Hydroxyquinoline Aluminum and Diamine Layers in an Organic EL Diode

Yutaka Ohmori, Yutaka Ohmori ; Yoshitaka Kurosaka, Yoshitaka Kurosaka ; Norio Tada, Norio Tada ; [et al.]

IOP Publishing ; 1997

In: Japanese Journal of Applied Physics Vol. 36, No. 8A ( 1997-08-01), p. L1022-

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In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 8A ( 1997-08-01), p. L1022-

Abstract: The insertion of a thin film of silicon monoxide (SiO) at the interface of the 8-hydroxyquinoline aluminum (Alq 3 ) and the diamine derivative (TPD) layers in the electroluminescent (EL) diode enhances the emission from the Alq 3 layer. The mechanism of emission enhancement from the hetero interfaces has been discussed with respect to the emission spectra of the diodes containing a thin film of a marker layer which was inserted into the emissive layer near the interface. The SiO layer thickness dependence on EL intensity in the diode with the SiO layer has been discussed.

Type of Medium: Online Resource

ISSN: 0021-4922 , 1347-4065

URL: Article

DOI: 10.1143/JJAP.36.L1022

RVK:

UA 4210.1

RVK:

UA 4210.2

RVK:

UA 4210

Language: Unknown

Publisher: IOP Publishing