In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 6A ( 1997-06-01), p. L668-
Kurzfassung:
A new method has been proposed for fabricating short-channel amorphous-silicon vertical thin-film transistors (TFTs). The channel is formed at the side wall of the gate electrode, but the source and drain are formed on the flat glass and the gate electrode regions, respectively. Due to the desirable shadowing effects of the side wall, the channel remains in an amorphous state, but the source and drain are crystallized selectively by excimer-laser irradiation. The 1.5 µm-long TFTs had field-effect mobility as high as 0.7 cm 2 /(V·s) and no current crowding effects.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.L668
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1997
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7