In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 6A ( 1997-06-01), p. L711-
Abstract:
Atomic force microscopy was employed to study the initial growth of copper films on various substrates in a metal-organic chemical vapor deposition (MOCVD) system using copper (I)-hexafluoroacetylacetonate trimethylvinylsilane as the precursor. Three-dimensional nuclei growth was observed. The nuclei-number density differs on various substrate surfaces, from 2×10 8 cm -2 on SiO 2 surface to 2×10 10 cm -2 on Pt surface at a substrate temperature of 498 K. Kinetic analysis about the nuclei number density on various substrate surfaces shows that the activation energy of the surface nucleation of the precursor is reversely proportional to the electric conductivity of the surface. The results indicate an electron transfer reaction between Cu +1 (hfac), an intermediate product of the surface decomposition of the precursor, and substrate surface plays a key role in the formation of initial Cu nucleus.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.L711
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7