In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 3S ( 1998-03-01), p. 1184-
Abstract:
The effect of nitride films on the diffusion of phosphorus and antimony in silicon has been investigated, in order to extract the fractional interstitialcy component of these dopant diffusion. Nitride film deposited on silicon substrate is used as an extrinsic source of vacancies. The phosphorus diffusion is retarded and the antimony diffusion is enhanced in silicon under nitride films. By observing the variation of the retardation in phosphorus diffusion and the enhancement in antimony diffusion, it is determined that the fraction of interstitialcy component in phosphorus and antimony diffusion is approximately 0.96 and 0, respectively.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.1184
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7