In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 3S ( 1998-03-01), p. 1316-
Kurzfassung:
The effects of segregated Ge on the electrical properties of the SiO 2 /SiGe interface are investigated. It is observed that the segregated Ge near the SiO 2 /SiGe interface, formed during oxidation of the SiGe layer, affects the threshold voltage of a metal-oxide-semiconductor (MOS) structure, and that the flat-band voltage shift increases when the Ge segregation is increased. The densities of the interface states and fixed charges are measured using the capacitance-voltage ( C – V ) method, and the relationships between these results and the material properties are examined. From the results, the SiO x structures are responsible for the increased negative fixed charges near the SiO 2 /SiGe interface. The mechanism proposed for the generation of negative fixed charges is that the oxygen in the Ge pileup region forms a Si–O–Ge bonding structure initially, and then the weaker Ge-O bond can easily be broken, leaving a Si–O– dangling bond and elemental Ge. The Si–O– dangling bond assumes a negative fixed charge state by trapping an electron.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.1316
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1998
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
