In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 3S ( 1998-03-01), p. 1518-
Kurzfassung:
A wrapped alignment mark structure is proposed for a nano-fabrication process by e-beam lithography (EBL) with organometallic vapor phase epitaxy regrowth. To protect the alignment marks during regrowth, a SiO 2 layer covers the surface of the gold mark and a thin tungsten layer is inserted between the mark and the substrate. The waveform serving as a mark detection signal is not significantly reduced after regrowth. By employing this mark system in EBL, an aligned nanostructure with a buried double-slit heterostructure and fine multi-electrodes is fabricated successfully to show the feasibility of this alignment mark method of wrapping. The center to center spacings of the double-slit and the fine electrodes are 40 nm and 50 nm, respectively.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.1518
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1998
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7