In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 6R ( 1998-06-01), p. 3232-
Abstract:
CuInSe 2 thin films are prepared on Mo-coated glass substrates by pulse-plated electrodeposition from an aqueous solution including CuCl 2 , InCl 3 and SeO 2 .
Film deposition with a stoichiometric composition and a smooth surface has been achieved by the control of the applied pulses with a duty cycle θ of 33% and a cathode potential during on-time of -0.7 V vs the saturated calomel electrode (SCE). The deposited films are annealed in nitrogen gas to be crystallized. The optimum annealing conditions have been determined using X-ray diffraction and Raman spectra measurement as: annealing temperature of 400°C, and annealing duration of 90 min.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.3232
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7