In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 8R ( 1998-08-01), p. 4515-
Abstract:
Pseudomorphic In x Ga 1- x As/Al 0.28 Ga 0.72 As
( x = 0.085–0.15) quantum wells (QWs) with well widths of
1.2, 2.4, 3.6, 4.8, 7.2 and 12 nm have been grown on (411)A and (100) GaAs substrates at a temperature
( T s ) of 520°C by molecular beam epitaxy (MBE).
The interface flatness of the QWs was characterized by photoluminescence (PL) at 4.2 K.
PL linewidths of the narrow (411)A QWs ( L w = 2.4 nm) with x = 0.085 and 0.15 were 7.3 meV which is
approximately 30–40% smaller than those of the (100) QWs, indicating that extremely flat interfaces over a macroscopic area
[(411)A super-flat interfaces] have been realized in the pseudomorphic
In x Ga 1- x As/Al 0.28 Ga 0.72 As QWs (up to x = 0.15)
grown on the (411)A GaAs substrates, similar to lattice-matched GaAs/Al x Ga 1- x As
QWs grown on (411)A GaAs substrate previously reported.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.4515
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
