In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 10R ( 1998-10-01), p. 5614-
Abstract:
Transparent conducting Sn-doped indium oxide (ITO) films have been prepared on
polyimide (PI) thin film substrate at low substrate temperature by reactive evaporation. The structural, optical and electrical properties of the deposited films have been investigated.
High quality films with resistivity as low as 7×10 -4 Ω·cm and transmittance over 80% have
been obtained. The temperature dependence of mobility and carrier concentration have been measured over a temperature range 10–400 K. Corresponding scattering mechanism of
charge carriers in the films have been discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.5614
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7