In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 10R ( 1998-10-01), p. 5757-
Abstract:
The growth region of particles in SiH 4 RF discharges is investigated with the parameters of pressure, SiH 4 concentration and RF power. When the diffusion time τ D of SiH 2 radicals
(key species for fast particle nucleation) through their production region is longer than their reaction time τ R with SiH 4 and sufficient SiH 2 radicals are supplied, particles grow at a
high growth rate of \gtrsim10's nm/s localized only around the plasma/sheath (P/S) boundary near the RF electrode where the radicals are produced. Under this condition, neutral clusters (resulting from the polymerization reactions) react with each other many times before they diffuse out of the radical production region. Since the diffusion time of clusters through the radical production region increases with cluster size, large clusters tend to
be localized there and grow further to sizes on the order of nm. With τ R 〉 τ D and/or insufficient supply of SiH 2 radicals, particles grow at a low rate of 1 nm/s and exist in the plasma bulk as well as around the P/S boundary. Such low growth rates suggest that negatively charged clusters are indispensable in order for particles to grow to above several nm in size.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.5757
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
