In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 12R ( 1998-12-01), p. 6287-
Abstract:
The paper presents a novel modification of a direct bonding technology. A
presented innovation is aimed at fabricating void free interfaces with a low defect density. For this purpose the bonding boundaries are manufactured as
grooved, and the bonding annealing is performed under vacuum conditions. It has been found that the grooves act as dislocation traps. A trapped gas
escapes through the grooves which facilitates the void removal. By X-ray and electron diffraction techniques the grooves have been observed to flatten
rapidly. The electrical properties of the grooved interfaces are as good as those of diffusion p-n junctions.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.6287
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7