In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 12S ( 1998-12-01), p. 6739-
Kurzfassung:
In this paper, a near-field photolithographic method which can
realize ultra high resolution beyond the diffraction limit of light is described. Evanescent light generated on a transparent mold with a
micro-relief illuminated on the condition of total internal reflection is used to expose a photoresist in contact with the mold. The plastic
replica mold is flexible to eliminate the difficulty of close contact with the photoresist, and the replica mold damaged by the contact with
the photoresist is disposable to maintain a high yield rate. We printed sub-100 nm features on a commercially available photoresist using
442-nm-wavelength light.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.6739
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1998
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7