In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 12S ( 1998-12-01), p. 6824-
Kurzfassung:
The possibility and usefulness of proximity correction in
100-nm-regime X-ray lithography was examined. Two-dimensional
array patterns of around 100 nm linewidth were fabricated by e-beam exposure and subsequent gold electroplating.
The mask patterns consist of normal rectangular patterns and shape-modified patterns which are
modified by a simple optical proximity correction (OPC)-like method such as the addition of a simple serif at the end of the pattern.
Different serifs sizes and pattern shapes were considered. The delineated images printed by normal rectangular mask pattern and
shape-modified mask patterns were compared with a target image to be defined on the wafer, and
the faithfulness of printed images was determined by measuring the lengths and widths at all the significant points on
two-dimensional patterns. The OPC-like mask modification technique had positive effects in
improving the fidelity of the printed image in the linewidth range below 150 nm,
especially in the reduction of image shortening in array patterns. The optimum serif size depends on the pattern size, pattern density and the process conditions, especially the gap between the mask and wafer.
In addition, two-dimensional aerial image simulations were performed and compared with experimental results and showed the same results as
the experiments.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.6824
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1998
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
