In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 12S ( 1998-12-01), p. 6841-
Abstract:
A thin film of SiC was deposited by electron cyclotron resonance plasma chemical vapor deposition (ECR plasma CVD) method for an X-ray mask membrane, and its physical and chemical properties were characterized. The source gases were SiH 4 , CH 4 , and Ar, and the stoichiometric film composition was achieved at a source gas ratio (SiH 4 /CH 4 ) of 0.4, microwave power of 500 W, and deposition temperature of 600°C. At these deposition conditions, the as-deposited film had compressive residual stress of about 100 MPa. According to the transmission electron microscopy (TEM) and X-ray diffraction (XRD) analyses, the microstructure of this SiC was an amorphous matrix embedded with nano-sized crystalline particles. The compressive residual stress could be changed to tensile stress via rapid thermal annealing in N 2 atmosphere without any notable structural changes. The membrane made of this SiC film had elastic modulus of 300 GPa, and showed optical transmittance of 85% at 633 nm wavelength.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.6841
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7