In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 11B ( 1998-11-01), p. L1412-
Abstract:
A new bonding technique is proposed by using localized heating to supply
the bonding energy. Heating is achieved by applying a dc current through micromachined heaters
made of gold which serves as both the heating and bonding material. At the interface of silicon and gold, the formation of eutectic
bond takes place in about 5 minutes. Assembly of two substrates in microfabrication processes
can be achieved by using this method. In this paper the following important results are obtained:
1) Gold diffuses into silicon to form a strong eutectic bond by means of localized heating.
2) The bonding strength reaches the fracture toughness of the bulk silicon. 3) This bonding technique greatly simplifies device fabrication and
assembly processes.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.L1412
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
