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Improvement of Electrode/Organic Layer Interfaces by the Insertion of Monolayer-like Aluminum Oxide Film

Yoshitaka Kurosaka, Yoshitaka Kurosaka ; Norio Tada, Norio Tada ; Yutaka Ohmori, Yutaka Ohmori ; [et al.]

IOP Publishing ; 1998

In: Japanese Journal of Applied Physics Vol. 37, No. 7B ( 1998-07-01), p. L872-

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In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 7B ( 1998-07-01), p. L872-

Abstract: Insertion of a thin film of aluminum oxide (Al 2 O 3 ) at the interface of electrodes and organic layers has been investigated. Insertion of a thin film of Al 2 O 3 at the interface of the ITO anode and the diamine derivative (TPD) layers, as well as at the interface of the 8-hydroxyquinoline aluminum (Alq 3 ) and the Mg:Ag cathode in the electroluminescent (EL) diode has been examined. The insertion of an Al 2 O 3 layer with a proper thickness was observed to enhances the emission efficiency of the device. The mechanism of quantum efficiency enhancement of the device was studied.

Type of Medium: Online Resource

ISSN: 0021-4922 , 1347-4065

URL: Article

DOI: 10.1143/JJAP.37.L872

RVK:

UA 4210.1

RVK:

UA 4210.2

RVK:

UA 4210

Language: Unknown

Publisher: IOP Publishing