In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 4S ( 1999-04-01), p. 2470-
Abstract:
A resistively-coupled single-electron transistor (R-SET),
whose gate was a tunnel resistor, was fabricated using a modulation-doped GaAs/AlGaAs heterostructure and
metal Schottky gates. Observed current-voltage characteristics show the Coulomb diamonds
which are predicted for an R-SET. This means that the tunnel resistor can be used as an R-SET gate.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.2470
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7