In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 4S ( 1999-04-01), p. 2544-
Kurzfassung:
We have performed periodic density functional calculations and molecular
dynamics (MD) simulations to investigate the reconstructions of the GaN (0001) surface and the heteroepitaxial growth process of InN thin films
on the GaN surface. Grown GaN planes have a polar configuration. Surface energy calculations predict that the reconstruction of the N-terminated
GaN (0001) surface is energetically more favorable than that of the Ga-terminated surface. MD results suggest that the growth of InN thin
films on Ga- and N-terminated surfaces is different. On the N-terminated surface, the surface morphology of the grown InN layer is
three-dimensional and rough. On the other hand, on the Ga-terminated
surface, it is observed that the InN molecules have adequate migration mobility for growth and this suggests that the growth follows the
two-dimensional growth mode.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.2544
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1999
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
