In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 5R ( 1999-05-01), p. 2917-
Abstract:
Transparent conductive tin oxide (TO, SnO 2 ) films have been prepared by low pressure metal organic chemical
vapor deposition (LP-MOCVD) from various mixtures of tetramethyltin (TMT) with oxygen and oxygen containing 2.96 to 5.1 mol% O 3 . The properties of TO films have been changed with the gas flow rate (oxygen, oxygen
containing ozone) and the substrate temperature. The use of oxygen containing ozone instead of pure oxygen reduced substrate temperature significantly and the resistivity while maintaining the same growth rate. The films prepared
using ozone showed resistivity ranging from 10 -2 to 10 -3 Ωcm, and ranging mobility from 10.5 to 13.7 cm 2 /Vs.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.2917
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
