In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 6R ( 1999-06-01), p. 3482-
Abstract:
The organic silsesquioxane, methylsilsesquioxane (MSQ), has a low dielectric constant because of its low film density compared to
thermal oxide. However, the quality of the MSQ film is degraded by the damage caused by oxygen plasma and hygroscopic behavior during photoresist stripping. In this work, we have studied the ability of H 2 plasma treatment to improve the quality of MSQ. The leakage
current of MSQ decreases as the H 2 plasma treatment time is increased. The dielectric constant of treated samples remains constant
(∼2.7). In addition, the thermal stability of MSQ film is significantly promoted. The H 2 plasma treatment can provide additional
hydrogen to passivate the inner structure of porous MSQ film, and reduce the probability of moisture uptake. Therefore, H 2 plasma
treatment can improve the quality of low- k MSQ film and reduce the issue of photoresist stripping in the integrated process.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.3482
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
