In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 6R ( 1999-06-01), p. 3689-
Abstract:
RuO 2 films prepared by reactive sputtering were annealed in air
and vacuum and the changes of their crystal structure, chemical binding state and resistivity were studied.
In air, the RuO 2 films maintain a rutile structure
below 800°C. Crystal grain growth was found above 600°C and the minimum resistivity of 46 µΩcm was obtained at 800°C.
The vacuum annealing was conducted with two types of annealing systems, one using an oil diffusion pump and the other using a turbomolecular pump
as the main pump. The RuO 2 films annealed in the system using the turbomolecular pump
were not reduced below 500°C, however, the surface of the films was reduced as low as 200°C in the system using the oil
diffusion pump. The difference in the reduction processes was examined on the basis of the
thermodynamics of RuO 2 and the influence of reducing residual gases in
vacuum.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.3689
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7