In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 9R ( 1999-09-01), p. 5040-
Kurzfassung:
A new process for scrubbing chemical-mechanical-polished silicon wafer
surfaces with a brush (brush-scrubbing process) was developed. The scrubbing is performed in two stages; the first stage involves a wet treatment using ozonized
water and dilute HF. The second stage involves scrubbing with a Poly(vinyl alcohol)(PVA) brush. After scrubbing, the number of residual particles, metal
and carbonaceous contamination, and surface roughness of the silicon wafer surface were evaluated. It was determined that this new brush-scrubbing process
efficiently removed particles from chemical mechanical polished silicon surfaces. Finally, a model explaining the new brush-scrubbing
process is constructed.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.5040
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1999
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
