In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 2R ( 1999-02-01), p. 618-
Kurzfassung:
Ammonia has been used to grow GaN layers by molecular beam epitaxy on c-plane
sapphire substrates. The ratio of nitrogen to Ga active species, i.e., the actual V/III ratio, has been varied from 1 to 4. It is found that increasing the V/III ratio improves the
material properties both in terms of optoelectronic and structural quality. This is demonstrated by photoluminescence (PL) experiments, Hall measurements, secondary
ion mass spectroscopy (SIMS), and atomic force microscopy. The origin of the residual n-type doping of undoped GaN layers is also discussed on the basis of SIMS and PL results.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1999
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7