In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 11R ( 1999-11-01), p. 6197-
Kurzfassung:
Selective epitaxial growth of GaAs on GaAs (111)B substrates masked by SiO 2 has been demonstrated by using migration-enhanced epitaxy (MEE) with annealing after deposition of either Ga or As 4 . When annealing is performed after Ga deposition, no polycrystalline GaAs is formed on the SiO 2 mask and the surface of the epitaxial layer grown in the window region is very smooth and uniform, whereas polycrystalline deposition occurs when the annealing is performed after As 4 deposition. These results indicate that complete selectivity is more easily obtained by annealing after Ga deposition rather than As 4 deposition. By using this method successful selective growth of GaAs has been achieved at substrate temperature around 590°C. Ga adatoms deposited on the SiO 2 mask seem to evaporate or diffuse into the window region during the Ga deposition and annealing period. The conditions for successful selective growth has been established as a function of substrate temperature and Ga flux, so that smooth epitaxial layers are grown reproducibly. We also discuss the surface diffusion of Ga atoms on the SiO 2 mask.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.6197
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1999
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
