In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 2R ( 1999-02-01), p. 622-
Kurzfassung:
The theoretical hole transport characteristics (Hall and drift
mobilities, and effective Hall factor) are reported for the cubic phase of p -type GaN. These characteristics are calculated
using the “relaxation time approximation” as a function of temperature. The calculations show that the dominant lattice
scattering mechanism for holes is the acoustic deformation potential. In the calculation of the scattering rate for ionized
impurity mechanism, the activation energy of 120 or 250 meV is used at different compensation ratios of given acceptor concentrations. Comparing the scattering time in these activation
energies, it is found that the activation energy difference is negligible at high compensation ratios. We determined the anisotropy
factors separately, due to the anisotropy of the energy surface for heavy- and light-hole bands, and these parameters are taken into
account in the Hall factor calculations. The Hall factors are very important when we attempt to compare the calculated drift mobility
with measured Hall ones. The theoretical Hall mobilities at total hole concentrations of 3.5 ×10 15 and 3.5 ×10 16 cm -3 are about 312 and 225 cm 2 V -1 s -1 , respectively,
with the activation energy of 120 meV and the compensation ratio of 0.5 at 300 K. It is found that Hall mobilities are strongly affected
by the compensation ratios. The obtained effective Hall factor in the cubic phase of GaN is in the range of 1.4 ( T =120 K) to 1.8
( T =400 K).
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1999
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
