In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 12S ( 1999-12-01), p. 7233-
Kurzfassung:
A novel nanoscale transistor, the metal/insulator tunnel
transistor (MITT), which consists of a metal source/drain and an insulator channel, is fabricated by conventional photolithography, and
its operation is experimentally verified. In the MITT, an insulator channel is sandwiched between the metal source and drain, and upon
this insulator channel a gate insulator and a gate electrode are prepared. The Fowler-Nordheim (F-N) tunneling currents which flow
through the metal/insulator tunnel junction are controlled by changing the gate voltage, through variation of the tunnel barrier thickness. In this
paper, it is demonstrated that the MITT can be fabricated by much simpler processes than MOSFET and that the MITT can be operated by
optimizing the MITT structure at room temperature. The results indicate the feasibility of using MITT as the
future switching device in ultralarge-scale integrated circuits (ULSI).
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.7233
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1999
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
