In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 9A ( 1999-09-01), p. L1015-
Kurzfassung:
We experimentally confirmed a basic operation of the n-channel junction field-effect transistor (JFET) embedded in the i layer (n - substrate) of a pin diode for X-ray detectors, which was proposed in Jpn. J. Appl. Phys. 37 (1998) L115.
To electrically isolate the n-channel from the n - substrate, a p + ring is formed around the JFET and is reverse-biased, instead of a deep p layer under the n-channel (i. e. , the conventional structure).
In the proposed structure, only one type of donor is ion-implanted in the n-channel, while in the conventional structure, both donor and acceptor are ion-implanted there. For the first time, the role of the p + ring in the electrical characteristics of the n-channel JFET is experimentally elucidated.
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.L1015
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1999
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7