In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 10A ( 1999-10-01), p. L1096-
Abstract:
Electric properties at metal/ n -type diamond interfaces are investigated. Homoepitaxial diamond thin films with n -type conduction are grown on {111} diamond substrates by microwave-enhanced plasma chemical vapor deposition. Gold, copper and aluminum, which have a low reactivity for diamond, are deposited on diamond films. Au and Cu contacts are found to give good n -type rectification properties with a small reverse current. However, a large reverse current is observed for Al contacts. This large reverse current may originate from the lowering of the Schottky barrier height at the Al/ n -type diamond interfaces.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.L1096
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
