In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 2B ( 1999-02-01), p. L178-
Abstract:
Although high critical current density ( J c ) YBCO can be deposited on rolling
assisted biaxially-textured substrates (RABiTS) with the YSZ/CeO 2 /Ni architecture, improvement
in uniformity is needed due to the presence of two-component YBCO epitaxy and cracking in the CeO 2 buffer. We have determined that Yb 2 O 3 is an excellent buffer
material that provides a single-component YBCO epitaxy. In addition, crack-free epitaxial Y 2 O 3 can be consistently deposited onto textured Ni substrates. High quality YBCO
films have been deposited, and J c as high as 1.8 ×10 6 A/cm 2 at 77 K
has been obtained on this Yb 2 O 3 /Y 2 O 3 /Ni alternative RABiTS architecture.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.L178
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7