In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 1A ( 1999-01-01), p. L33-
Abstract:
In this paper, we report the use of shallow germanium halo doping on improving the
short-channel effects of deep submicron n-channel metal-oxide-semiconductor field effect transistors. It is demonstrated that by adding a shallow (i.e., 10 keV)
germanium large-angle-tilt implant (LATID), V th lowering in short-channel transistors
is significantly improved. The improvement is found to increase with increasing germanium dose. A low germanium dose ( e.g. , 5×10 12 cm -2 ) is also found to
effectively improve the drain-induced barrier lowering (DIBL) of the short-channel transistors. Our results also show that junction leakage degradation, which has been previously reported to accompany germanium implants using higher energy, can be
minimized by the shallow low-dose implant used in this study.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7