In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 5B ( 1999-05-01), p. L586-
Kurzfassung:
ZnO whiskers were epitaxially grown by a chemical-vapor deposition technique
employed at atmospheric pressure. Highly oriented ZnO whiskers grew at a substrate temperature of
550°C on (0001)α-Al 2 O 3 substrates
with a growth rate of 3.7 nm/s. X-ray diffractometry revealed that the epitaxial relationship
between the whiskers and the substrate was determined as ZnO[1010](0001)//Al 2 O 3 [1210](0001) or ZnO[1210](0001)//Al 2 O 3 [1010](0001). In addition, the full-width at half maximum value of the (0002) reflection was
as low as 0.43°. Images obtained using a scanning electron microscope were analyzed and it was found that the whisker tip likely has
a radius of curvature of approximately 20 nm. The typical number density of the whiskers has reached 1.3×10 5 mm -2 .
Materialart:
Online-Ressource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.L586
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
1999
ZDB Id:
218223-3
ZDB Id:
797294-5
ZDB Id:
2006801-3
ZDB Id:
797295-7
