In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 3R ( 2000-03-01), p. 1331-
Abstract:
Silicon films were grown by molecular beam epitaxy (MBE) at temperatures below 350°C. The X-ray diffraction peaks from the (220) plane were observed only in the films grown at 300°C and 250°C, although they were not observed in the films grown above 350°C and below 200°C. The microroughness of the surface of the film was also examined by reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). The relationship between the X-ray diffraction peak from the (220) plane and the microroughness of the surface of the film are discussed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.1331
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7