In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 4R ( 2000-04-01), p. 1669-
Abstract:
Effects of annealing on the properties of boron-doped CdS films prepared by chemical bath deposition using boric acid as a dopant source were investigated. The crystalline orientation and the grain size of CdS films appeared to be seriously affected by the annealing ambient. The crystal structures of H 2 -annealed films were wurtzite type with a preferential orientation of the (002) plane and the grain size slightly increased. For samples annealed in N 2 and air, however, the preferential orientation of the (002) plane disappeared or decreased and the grain size was identical to or smaller than that for H 2 ambient. The dark resistivity decreased by annealing in H 2 and increased further with increasing annealing temperature. For N 2 and air ambient, the dark resistivity was larger than that of the H 2 -annealed films and the optical transmittance was less than that of the H 2 -annealed films. These results suggest
that annealing in H 2 ambient is suitable for photovoltaic device application.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.1669
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7