In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 4R ( 2000-04-01), p. 1675-
Abstract:
We present the experimental framework for the origin of the anomalously large thermoelectric power for Si and Au-doped Ge superlattice thin film. The thermoelectric power of the sample still remains anomalously large even though the superlattice structure begins to collapse. An amorphous Ge thin film displays large thermoelectric power. The crystallized samples have almost the same thermoelectric power as that of conventional SiGe bulk samples. The main cause of this anomalously large thermoelectric power of Si/Ge superlattice thin films is amorphous Ge layer.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.1675
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7