In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 4R ( 2000-04-01), p. 1727-
Abstract:
A new method is proposed for a significant reduction of series resistance and device heating in long wavelength vertical-cavity surface-emitting lasers (VCSELs) based on InP. Our technique involves a twofold epitaxial growth with a buried low-resistance (3×10 -6 Ωcm 2 ) tunnel junction. The substitution of high-resistive p -type confining layers by low-resistive n -type material results in total resistances smaller 100 Ω even for the case of non-conducting dielectric mirrors. With the application of buried tunnel junctions in a VCSEL-structure, we could demonstrate small electrical series resistance ( U 〈 1 V at 3 kAcm -2 ) and effective current confinement simultaneously. Furthermore, because of the laterally varying cavity length, an effective lateral waveguiding effect occurs.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.1727
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7